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  Datasheet File OCR Text:
 SMD Type
N-Channel Silicon MOSFET KTD2017
IC IC
TSSOP-8
Features
Low ON resistance. 2.5V drive. Mounting height 1.1mm Composite type, facilitating high-density mounting.
Unit: mm
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1
5 : Gate2 6 : Source2 7 : Source2 8 : Drain2
Absolute Maximum Ratings Ta = 25
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current(DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature (PW 10is) Symbol VDSS VGSS ID IDP PD PT Tch Tstg Rating 20 10 5 20 0.8 1.3 150 -55 to +150 Unit V V A A W W
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1
SMD Type
KTD2017
Electrical Characteristics Ta = 25
Parameter Drain-to Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Static Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode Forward Voltage Symbol Testconditons Min 20 1 10 0.4 11.2 16 17 20 1500 350 230 19 See Specified Test Circuit 190 90 160 42 VDS= 10 V,VGS = 10 V,ID = 5 A 4 8 IF = 5 A, VGS = 0 V 0.8 1.2 23 29 1.3 Typ Max
IC IC
Unit V A A V S m m pF pF pF ns ns ns ns nC nC nC V
V(BR)DSS ID=1mA, VGS=0 IDSS IGSS VDS = 20 V, VGS = 0 V VGS = 8 V, VDS = 0 V
VGS(off) VDS = 10 V, ID = 1 mA Yfs VDS = 10 V, ID = 5 A
RDS(on)1 VGS = 4 V, ID = 4 A RDS(on)2 VGS = 2.5 V, ID = 2 A Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS = 10 V,f = 1 MHz VDS = 10 V,f = 1 MHz VDS = 10 V,f = 1 MHz
Switching Time Test Circuit
2
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